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 PHOTODIODE
Si APD
S6045 series
Low temperature coefficient type APD for 800 nm band
Features Applications
l Low temperature coefficient: 0.4 V/C l High-speed response l High sensitivity, low noise
l Optical fiber communications l Spatial light transmission l Rangefinder
s General ratings / Absolute maximum ratings
Type No. Dimensional outline/ Window material *1 /K /K /K {/K Package Effective active area size *2 (mm) 0.2 0.5 1.0 1.5 3.0 5.0 Effective active area (mm2) 0.03 0.19 0.78 1.77 7.0 19.6 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (C) (C)
S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
TO-18 TO-5 TO-8
-40 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
S p ectra l re sp on se ra ng e Excess Photo Quantum B rea kd o w n Peak * 3 C ut-off Dark Tem p. noise Gain sensitivity efficiency vo lta ge Terminal 3 3 sensitivity coefficient current * frequency * M VBR S QE capacitance *3 figure *3 wavelength fc ID of ID=100 A x M=1 M=1 =800 nm Ct V BR RL=50 p =800 nm =800 nm =800 nm Typ. Max. (V) (V) Typ. (nA) 0.05 0.1 0.2 0.5 1 3 Max. (nA) (MHz) 0.5 1000 1 900 2 600 5 350 10 80 30 35
Type No.
(nm)
(nm)
(A/W)
(%)
(V/C)
S6045-01 S6045-02 S6045-03 40 0 to 1 00 0 800 0.5 75 200 300 S6045-04 S6045-05 S6045-06 *1: K: borosilicate glass *2: Area in which a typical gain can be obtained. *3: Values measured at a gain listed in the characteristics table.
0.4
(pF) 1.5 3 6 12 50 120
100 0.3 60 40
1
Si APD
s Spectral response
50 M=100 (Typ. Ta=25 C, =800 nm)
S6045 series
s Quantum efficiency vs. wavelength
(Typ. Ta=25 C)
100
PHOTO SENSITIVITY (A/W)
40
QUANTUM EFFICIENCY (%)
M=50
80
30
60
20
40
10
20
0 200
400
600
800
1000
0 200
400
600
800
1000
WAVELENGTH (nm)
KAPDB0026EA
WAVELENGTH (nm)
KAPDB0027EA
s Dark current vs. reverse voltage
10 nA (Typ. Ta=25 C)
s Gain vs. reverse voltage
104 -20 C (Typ. =800 nm)
S6045-05 1 nA
103
DARK CURRENT
S6045-04 S6045-06
0 C
GAIN
100 pA S6045-03
102
20 C
10 pA S6045-02 1 pA 0 50 100 150 200 250 S6045-01
40 C 101 60 C
100 160
180
200
220
240
260
REVERSE VOLTAGE (V)
KAPDB0028EA
REVERSE VOLTAGE (V)
KAPDB0029EB
2
Si APD
s Terminal capacitance vs. reverse voltage
1 nF (Typ. Ta=25 C, f=1 MHz)
S6045 series
S6045-06
TERMINAL CAPACITANCE
100 pF
S6045-05 S6045-04 S6045-03
10 pF
S6045-01 1 pF 0 50 100 150
S6045-02
200
250
REVERSE VOLTAGE (V)
KAPDB0030EA
3
Si APD
s Dimensional outlines (unit: mm) S6045-01/-02/-03
5.4 0.2
3.7 0.2
S6045 series
S6045-04
4.7 0.1
WINDOW 3.0 MIN. 9.2 0.2 8.2 0.1
PHOTOSENSITIVE SURFACE 0.45 LEAD
2.8
0.4 MAX.
2.54 0.2
5.08 0.2
1.2 MAX.
1.5 MAX.
CASE
CASE
KAPDA0010EA
(20)
0.45 LEAD
0.4 MAX.
PHOTOSENSITIVE SURFACE
13
2.8
4.7 0.2
WINDOW 2.0 MIN.
KAPDA0011EB
S6045-05
9.1 0.2 WINDOW 5.9 0.1
S6045-06
13.9 0.2
4.2 0.2
8.1 0.1
0.4 MAX.
0.5 MAX. 3.1
7.5 0.2
PHOTOSENSITIVE SURFACE 0.45 LEAD
2.8
5.08 0.2
(20)
PHOTOSENSITIVE SURFACE 0.45 LEAD
INDEX MARK 1.4
1.5 MAX.
1.0 MAX.
CASE
The glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
CASE
The glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
KAPDA0012EB
(15)
4.9 0.2
WINDOW 10.5 0.1
12.35 0.1
KAPDA0013ED
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KAPD1005E04 Sept. 2005 DN


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